According to the news, Hubble Technology Investment Co., Ltd., a subsidiary of Huawei, recently invested in Shandong Tianyue Advanced Materials Technology Co., Ltd., holding 10%.
Editor’s note: This article is from the WeChat public account “Semiconductor Industry Watch” ( ID: icbank).
The news shows that Hubble Technology Investment Co., Ltd., a subsidiary of Huawei, recently invested in Shandong Tianyue Advanced Materials Technology Co., Ltd., holding 10% of its shares
It is China’s third-generation semiconductor material silicon carbide enterprise. Silicon carbide is an ideal substrate material for manufacturing high-temperature, high-frequency, high-power semiconductor devices. Its comprehensive performance can be improved by thousands of times compared with silicon materials. It is known as the “core” of solid-state light sources, power electronics, and microwave RF devices.
In April this year, data from Kaixinbao showed that Huawei has established an investment company called Hubble Technology Investment Co., Ltd. The company has a registered capital of 700 million yuan and is 100% owned by Huawei Investment Holdings Co., Ltd.
Harb Technology Investment Co., Ltd. is a venture capital business. The legal representative, chairman and general manager are both Bai Hao. He is also the president of Huawei Global Financial Risk Control Center.
According to the data, Huawei Tianbo Company, which was invested by Huawei Hubble, was established in December 2011 and is a high-tech enterprise mainly engaged in third-generation semiconductor silicon carbide materials. The company has invested in the third-generation semiconductor industrialization base, with hardware and software conditions for R&D, production and international advanced semiconductor substrate materials. It is an advanced enterprise in the third-generation semiconductor substrate material industry in China.
In February of this year, Shandong Tianyue silicon carbide power semiconductor chip research and development and industrialization project officially started.
It is understood that Tianyue’s silicon carbide power semiconductor chip and electric vehicle module research and development and industrialization project is one of the key projects of Jinan City in 2019. The total investment of the project is 650 million yuan, and the total occupied area of the project is 2400. Square meters, mainly to build silicon carbideEach of the power chip production line and the silicon carbide electric vehicle drive module production line is constructed using the vacant area of the original factory building.
According to the official news of Shandong Tianyue, this project produced SiC substrate epitaxial wafers under silane and methane under hydrogen and argon conditions, after mask deposition, photolithography, development, ashing, etching and inspection. Packaging and other processes to produce SiC MOSFET transistors with an annual production scale of 4 million/year; using silicon carbide epitaxial materials as raw materials, wafer marking, ion implantation, plate deposition, ohmic contact, Schottky electrodes, blunt SiC power diodes are produced by the process of layer preparation, and the annual production scale is 12 million pieces/year. The silicon carbide chips are used as raw materials, and the silicon carbide electric wires are produced by welding, cleaning, aluminum wire bonding and potting silicone gel. The vehicle drive module is designed to have an annual production scale of 10,000 pieces per year.
Silicon silicon carbide is the future of power devices?
SiC (SiC) is one of the representatives of the third-generation semiconductor materials and is a compound formed by the C element and the Si element. Compared with traditional semiconductor material silicon, it has obvious advantages such as high critical breakdown electric field and high electron mobility. It is an excellent semiconductor material for manufacturing high voltage, high temperature and radiation resistant semiconductor devices. It is also the best comprehensive product at present. The third-generation semiconductor materials with the highest degree of technology and the most mature technology, compared with the physical properties of silicon materials, the main features include:
(1) The critical breakdown electric field strength is nearly 10 times that of silicon material;
(2) High thermal conductivity, more than 3 times that of silicon material;
(3) The saturation electron drift speed is twice as high as that of silicon material;
(4) Good anti-irradiation and chemical stability;
<5> (5) As with silicon materials, a thermal insulating process can be used to directly grow a silicon dioxide insulating layer on the surface.
For example, under the same withstand voltage level, the Si-MOSFET must be made thicker, and the higher the withstand voltage, the thicker the thickness, resulting in higher material costs. There is a voltage isolation region between the gate and the drain. The wider the region, the larger the internal resistance, the more power loss, and the SiC-MOSFET can be made thinner, reaching 1/10 of the thickness of the Si-MOSFET. At the same time, the resistance of the drift region is reduced to 1/300 of the original. The on-resistance is small, the energy loss is small, and the performance is improved.
The silicon carbide power semiconductor device includes a diode and a transistor, wherein the diode mainly has a junction barrier Schottky power diode (JBS), a PiN power diode, and a hybrid PiN Schottky diode (MPS); the transistor mainly has a metal oxide semiconductor Field effect transistors (MOSFETs), bipolar transistors (BJTs), junction field effect transistors (JFETs), insulated gate bipolar transistors (IGBTs), and gate turn-off thyristors (GTOs).
Relative Si Power Devices, SiCThe advantages of diodes and transistors are: in the diode, the Si-FRD structure voltage can reach 250V, and the SiC voltage can reach 4000V; the Si-MOSFET in the transistor can achieve 900V, and the market also has 1500V. However, the characteristics will be worse, and the SiC product voltage can reach 3300V.
The silicon carbide power device has the unique advantages of high voltage, high current, high temperature, high frequency and low loss, which will greatly improve the conversion efficiency of existing energy, and have a significant and far-reaching impact on the field of high-efficiency energy conversion. There are smart grids, rail transit, electric vehicles, new energy grids, and communication power supplies. Known as the future of power device selection.